Once the sensor was exposed to the CO-containing ambient, the drain current, I, of the high electron mobility transistors increased due to chemisorbed oxygen on ...
I–V measurements and temperature dependence of electrical conductivity on polycrystalline samples of Bi2Se3 and SnBi4Se7 have been performed. From the anal.
Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure ...
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Abstract. Anisotropic heat transport in a Ga0.84In0.16N/GaN-heterostructure on a sapphire substrate is observed from microscopic Raman images obtained by ...
Enclosed please find the 2019 County of Lehigh Tourism Development Grant application. Although we do not know the exact amount of funding available for ...
Phys., 120[14], 142107 (2016). P. Gao, H.-J. Liu, Y.-L. Huang, Y.-H. Chu, R. Ishikawa, B. Feng, Y. Jiang, N. Shibata, E.-G. Wang, and Y. Ikuhara, "Atomic ...
The device exhibits versatile functionalities and demonstrates memtransistor-like behavior, making it a promising candidate for synaptic devices and ...
Quantum dot emitters in two-dimensional photonic crystals of ...
scholars.cityu.edu.hk › publications
We report on the incorporation of semiconductor quantum dots as internal emitters into two-dimensional photonic crystals of macroporous silicon.
Oct 4, 2013 · Applied Physics Letters 2023, 122 (14) , 142107. https://doi.org/10.1063/5.0144601; Shusaku Takahashi, Ryo Sekiya, Takeharu Haino ...
Energy transport analysis in a Ga0.84In0.16N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers.