研究成果列表
單位名稱電子物理學系教師姓名鄭秋平
教師分級教授專兼任專任
在校狀態在職行政職務

期刊論文（共計40筆）
序號學年度學期年度月份作者題目通訊作者作者順位期刊名稱卷數頁數關鍵字
1083119951T.-W. Pi, R.-T. Wu, and C.-P. ChengPhotoemission study of potassium on Si-based semiconductor: a-Si:H, a-Si, and c-Si(001)是第三順位J. Appl. Phys.    
2083119951T.-W. Pi, R.-T. Wu, and C.-P. ChengPhotoemission study of Cs on Si:H是第三順位Solid State Comm   
3085119971T.-W. Pi, I.-H. Hong , and C.-P. Cheng, and R.-T. WuValence band photoemission study of (Ba, Cs) on W (110)否第三順位Surf. Rev. Lett.   
4086119981C.-P. Cheng, I.-H. Hong, and T.-W. PiSynchrotron radiation photoemission study of Ba on Si(001)2x1 surface是第一順位Phys. Rev. B   
5086119981T.-W. Pi, I.-H. Hong, and C.-P. ChengSynchrotron-radiation photoemission study of Ba on W(110) surfac是第三順位Phys. Rev. B    
6086119981T.-W. Pi, C.-P. Cheng, and I.-H. HongSi 2p core level spectroscopy on Si(001)2x1: The charge-transfer effect是第二順位 Surf. Sci.   
7086119981T.-W. Pi, C.-P. Cheng, and I.-H. HongA potassium doped m thick C60 film: Direct observations of threshold doping and phases evolution否第一順位Solid State Comm.    
8086119981T.-W. Pi, C.-P. Cheng, I.-H. Hong, M.-H. Ko, and R.-T. WuPhotoemission study of K doping on a monolayer of C60 on clean Si(001)2x1 surface 是第二順位Surf. Rev. Lett   
9088120001T.-W. Pi, I.-H. Hong, C.-P. Cheng, and G. K. WertheimSurface photoemission from Si(100) and inelastic electron mean-free-path in silicon是第三順位J. El. Spectr. Rel. Phen.   
10090120021T.-W. Pi, C.-P. Ouyang, J.-F. Wen, L.-C. Tien, J. Hwang, C.-P. Cheng, G. K. WertheimEarly nucleation on the Si(100) surface是其他Surf. Sci   
11091120031T.-W. Pi, L.-C. Tien, J.-F. Wen, C.-P. Ouyang, C.-P. Cheng, and J. HwangPhotoemission study of CaF2 on Si(001)-2×1 during annealing是其他Solid State Comm.    
1209312005110. J.-F. Wen, L.-B. Wang, C.-H. Liu, H.-H. Lee, J. Hwang, C.-P. Ouyang, T.-W. Pi, J.-W. Hwang and C.-P. ChengSolid state amorphization at the room temperature deposited Ni/Si(100) interface是其他 J. Vac. Sci. Technol. B   
13093120051C.-P. Cheng*, T.-W. Pi, C.-P. Ouyang, and J.-F. WenChemisorption of C60 on the Si(001)-2x1 surface at room temperature否第一順位J. Vac. Sci. Technol. B   
14094120061C.-P. Cheng*, J.-F. Wen, C.-P. Ouyang, and T.-W. Pi, SiC formation by C60 molecules as a precursor: A synchrotron-radiation photoemission study of the carbonization process否第一順位J. Vac. Sci. Technol. A   
15094120061C.-P. Cheng*, J.-F. Wen, C.-P. Ouyang, J.-W. Huang, and T.-W. PiFormation of Si-terminated SiC films on annealing C60 on a Si(001)-2x1 surface否第一順位Thin Solid Films   
16094120061C.-P. Cheng*, J.-W. Huang, T.-W. Pi, and H.-H. LeeSurface structure of SiC formed by C60 molecules on a Si(001)-2x1 surface at 800 °C 否第一順位J. Appl. Phys.   
17095120071I.-H. Hong, C.-P. Cheng, T.-W. Pi The speci.c oxidation mechanism in the initial stages of O2 adsorption on submonolayer Ba covered W(110) surface是第二順位Surf. Sci.   
18095120071I.-H. Hong, C.-P. Cheng, T.-W. PiPhysical origin of the anomalous negative W 4f surface core-level shifts in the initial oxidation of submonolayer Ba on a W(110) surface 是第二順位Phys. Rev. B   
19096120081H.-H. Lee, J. Hwang, T.-W. Pi, Y.-C. Wang, W.-J. Lin, C.-P. ChengBond cutting in Cs-doped tris(8-hydroxyquinoline) aluminium是其他 J. Synchrotron Rad.   
20097120091Tun-Wen Pi, Guan-Ru Lee, Ching-Hsuan Wei, Wen-Yen Chen, and Chiu-PingCheng Interfacial electronic structure of copper phthalocyanine on a gold surface studied by synchrotron radiation photoemission 是其他J. Appl. Phys.   
21097120091Chiu-Ping Cheng*, Wen-Yen Chen, Ching-Hsuan Wei, and Tun-Wen PiInterfacial electronic structures of C60 molecules on a K-doped CuPc surface否第一順位Appl. Phys. Lett.   
221001201111Tun-Wen Pi, Chiu-Ping Cheng, and G. K. WertheimThe reaction of Si(001) with magnesium and calcium否第二順位Journal of Appkied Physics109 043701  
231001201112Chiu-Ping Cheng*, Wen-Yen Chen, Ching-Hsuan Wei, and Tun-Wen PiEffect of K doping on CuPc: C60 heterojunctions是第一順位Journal of Applied Physics110 113714  
24100220127Chiu-Ping Cheng*, Yi-Wei Chan, Chih-Feng Hsueh, and Tun-Wen PiInterfacial electronic properties of the heterojunctions C60/rubrene/Au and rubrene/C60/Au是第一順位Journal of Applied Physics112 023711  
251021201312Chiu-Ping Cheng*, Cheng-Wei Lee, Yu-Ya Chu, Ching-Hsuan Wei, and Tun-Wen PiThe effect of magnesium added at C60/Rubrene heterointerfaces是第一順位Journal of Applied Physics114 243704  
26101220133C.-P. Cheng*, T.L. Li, C.-H. Kuo, and T.-W. PiElectronic structures of pristine and potassium-doped rubrene thin films是第一順位Organic Electronics14 942-950  
27103120151鄭秋平Cesium doping at C60/rubrene heterointerfaces for improving the performance of organic light- and current-generating devices是第一順位Journal of Applied Physics117 015501  
281041201512鄭秋平Interfacial electronic structure of Na deposited on rubrene thin film studied by synchrotron radiation photoemission是第二順位Applied Surface Science357 2255  
29104120159鄭秋平Upgrade of beamline BL08B at Taiwan Light Source from a photon-BPM to a double-grating SGM beamline否其他Journal of Synchrotron Radiation22 1312-1318  
30105120171T. W. Pi,* W. S. Chen, Y. H. Lin, Y. T. Cheng, G. J. Wei, K. Y. Lin, C.-P. Cheng,* J. Kwo,* M. Hong*Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance是其他Applied Physics Letters110 052107  
31105120171Chiu-Ping Cheng*, W. S. Chen, Y. T. Cheng, H. W. Wan, C. Y. Yang, T. W. Pi*, J. Kwo, and M. HongAtomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2×4 interface: An in-situ synchrotron radiation photoemission study是第一順位Applied Surface Science393 294-298  
32105220176Y. T. Cheng, et. al. C.-P. Cheng, H. H. Cheng, J. Kwo*, M. Hong*, and T. W. Pi*Surface electronic structure of epi germanium (001)-2×1否其他Applied Physics Express10 075701  
331071201810Yi-Ting Cheng, Hsien-Wen Wan, Chiu-Ping Cheng, Jueinai Kwo, Minghwei Hong and Tun-Wen PiAtom-to-atom interaction of O2 with epi Ge(001)-2×1 in elucidating GeOx formation否其他Applied Physics Express11 115701  
34106220182Chiu-Ping Cheng*, W. S. Chen, Y. T. Cheng, H.-W. Wan, C. Y. Yang, T. W. Pi*, J. Kwo*, and M. Hong*Atomic nature of the growth mechanism of atomic layer deposited high κ Y2O3 on GaAs(001) 4×6 based on in situ synchrotron radiation photoelectron spectroscopy是第一順位ACS Omega3 2111-2118  
35107120188C.-P. Cheng*, W. S. Chen, Y. T. Cheng, H. W. Wan, K. Y. Lin, L. B. Young, C. Y. Yang, T. W. Pi*, J. In situ direct determination of band offset and interfacial dipole potential of a laminar ALD-Y2O3 on a p-type GaAs(0 0 1)-4×6 surface是第一順位J. Phys. D: Appl. Phys.51 405102  
36107220194Yi-Ting Cheng, Hsien-Wen Wan, Chiu-Ping Cheng*, Jueinai Kwo*, Minghwei Hong*, and Tun-Wen Pi*Microscopic Views of Atomic and Molecular Oxygen Bonding with epi Ge(001)-2×1 Studied by High-Resolution Synchrotron Radiation Photoemission是第三順位Nanomaterials9 554  
37107220194K.Y.Lin et al. C.P.Cheng*, T.W.Pi*, J.Kwo* , and M.Hong*Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum是其他Journal of Crystal Growth512  223-229  
38108220207Yi-Ting Cheng, Hsien-Wen Wan, Chao-Kai Cheng, Chiu-Ping Cheng, J. Raynien Kwo, MinghweiLow-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: electronic structure study via synchrotron radiation photoemission是第一順位Applied Physics Express13 085504  
39109120208Yi-Ting Cheng, Hsien-Wen Wan, Chao-Kai Cheng, Chiu-Ping Cheng, Jueinai Kwo, Minghwei HoSurface electronic structure of Si1−xGex(001)-2 × 1: a synchrotron radiation photoemission study是其他Applied Physics Express13 095503  
40111220237W. S. Chen, K. Y. Lin, Y. H. G. Lin, L. B. Young, C. P. Cheng, T. W. Pi, J. Kwo, and M. HongUltrahigh Vacuum Annealing of Atomic-Layer-Deposited Y2O3/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation是其他ACS Applied Electronic Materials 5 3809-3816  

會議論文（共計92筆）
序號學年度學期年度月份作者題目通訊作者作者順位發表性質會議論文集或研討會名稱地點
1091120031C.-P. Cheng, J.-F. Wen, C.-P. Ouyang, and T.-W. PiPhotoemission study of C60 on the Si(001)-2×1 surface at room temperature否 NSRRC user meeting  
2092120041J.-W. Huang, C.-P. Cheng, C.-C. Liu, H.-H. Lin, H.-H. Lee, I.- H. Hung, Y.- J. Liao, J.-H. Liu, J.-F. Wen, C.-P. Ouyang, T.-W. PiSiC film growth by C60 decomposition on a Si(001)-2x1 surface否  第十屆同步輻射研究中心用戶會議  新竹 
3092120041C.-P. Cheng, J.-F. Wen, C.-P. Ouyang, T.-W. PiSiC formation by the C60 molecules as a precursor否 第十屆同步輻射研究中心用戶會議 新竹 
4092120041C.-P. Cheng, J.-F. Wen, C.-P. Ouyang, and T.-W. PiSiC formation by annealing C60 films on the Si(001)-2×1 surface: a high-resolution photoemission study of the carbonization process否 物理年會  
5092120041C.-P. Cheng, J.-F. Wen, C.-P. Ouyang, and T.-W. PiIoning bonding of C60 on the Si(001)-2×1 surface at room temperature否 物理年會  
60931200410C.-C. Liu, J.-W. Huang, S.-S. Lin, H.-H. Lee, I.-H. Hong, C.-P. Cheng, Y.-J. Liao, J.-F. Wen, C.-P. Ouyang, and T.-W. Pi, Surface electronic structure of Al on monolayer LiF on monolayer tris(8-hydroxyquinoline) aluminum (Alq3) 否 NSRRC Users’ Meeting & Workshops  
7093120051C.-P. Cheng*, J.-F. Wen, C.-P. Ouyang, and T.-W. PiSiC formation by the C60 molecules as precursors否 中華民國物理年會  
8093120051J.-W. Hwang, C.-P. Cheng*, C.-C. Liu, S.-S. Lin,H.-H. Lee, I.-H. Hong, Y.-J. Liao, J.-H. Liu, J.-F. Wen, C.-P. Ouyang, and T.-W. PiSiC film growth by C60 decomposition on a Si(001)-2x1 surface否 中華民國物理年會  
90941200510C.-P. Cheng*, J.-F. Wen, C.-P. Ouyang, J.-W. Huang, and T.-W. PiFormation of silicon carbide on annealing C60 on a Si(001)-2x1 surface 否 NSRRC Users’ Meeting & Workshops  
10094120061C.-H. Wei, H.-H. Lee, Y.-C. Wang, W.-J. Lin, C.-P. Cheng, and T.-W. PiInterfacial electronic structure of tris(8-hydroxyquinoline) aluminum (Alq3) deposited on Mg:Ag studied by synchrotron radiation photoemission否 中華民國物理年會  
11094120061Y.-C. Wang, H.-H. Lee, W.-J. Lin, C.-H. Wei, C.-P. Cheng, and T.-W. PiInterfacial electronic structure of the electron-transport and hole-transport organic contact probed by synchrotron radiation photoemission: The case study of tris((8-hydroxyquinoline) aluminum (Alq3) and fac-tris(2-phyenylpyridine) iridium (Ir(ppy)3) 否 中華民國物理年會  
12094120061W.-J. Lin, Y.-C. Wang, C.-P. Cheng, H.-H. Lee, C.-H. Wei, and T.-W. PiSurface electronic structure of K:Ag on tris(8-hydroxyquinoline) aluminum studied by synchrotron radiation photoemission否  中華民國物理年會   
13094120061C.-P. Cheng*, J.-W. Huang, T.-W. Pi, and H.-H. LeeSurface structure of SiC formed by C60 molecules on a Si(001)-2x1 surface at 800 °C否 中華民國物理年會  
14094120061W.-J. Lin, Y.-C. Wang, C.-P. Cheng, H.-H. Lee, C.-H. Wei, T.-W. PiSynchrotron-radiation photoemission study of potassium-doped Ag/tris(8-hydroxyquinoline)aluminum interface 否 NSRRC Users’Meeting & Workshops  
150951200610Y.-C. Wang, H.-H. Lee, W.-J. Lin,C.-H. Wei, C.-P. Cheng, T.-W. PiSurface electronic structure of Ca:Ag on tris(8-hydroxyquinoline) aluminum studied by synchrotron-radiation photoemission否 NSRRC Users’ Meeting & Workshops  
160951200610C.-P. Cheng*, J.-W. Huang, H.-H. Lee, and T.-W. Pi Synchrotron-radiation photoemission study of SiC formed by C60 molecules on a Si(001)-2x1 surface at 800 °C 否 NSRRC Users’Meeting & Workshops  
17095120071C.-Y. Hsiao, H.-S. Liao, C.-H. Lin, C.-H. Wei, H.-H. Lee, C.-P. Cheng*, T.-W. PiSurface electronic structure of Mg on copper phthalocyanine (CuPc)否 中華民國物理年會  
18095120071H.-S. Liao, C.-Y. Hsiao, C.-H. Lin, C.-H. Wei, H.-H. Lee, C.-P. Cheng*, T.-W. Pi Synchrotron-radiation photoemission study of the copper phthalocyanine (CuPc) on β-SiC(001) 2x1 surface否 中華民國物理年會  
190961200710C.-Y. Hsiao, H.-S. Liao, C.-H Lin, C.-H. Wei , H.-H. Lee, T.-W. Pi, C.-P. Cheng*Surface electronic structure of Mg on copper phthalocyanine (CuPc)否 NSRRC Users' Meeting & Workshops  
200961200710W.-Y Chen, C.-H. Wei, T.-W Pi, C.-P. ChengSynchrotron-radiation photoemission study of electronic structures of the C60/KxCuPc否 NSRRC Users’ Meeting & Workshops  
21096120081W.-Y Chen, C.-H. Wei, T.-W Pi, C.-P. ChengElectronic properties of the organic semiconductor heterojunction: C60/KxCuPc否 中華民國物理年會  
22096120081C.-H. Wei, W.-Y Chen, C.-P. Cheng, H.-C. Lin, T.-W. PiA photoemission study of electronic structure of K deposited on metal-free phthalocyanine (H2Pc) interface否 NSRRC users meeting  
230971200810C.-P. Cheng*, W.-Y Chen, C.-H. Wei, T.-W. PiSynchrotron-radiation photoemission study of the interfacial electronic structure of the K-doped CuPc: C60 heterojunction否 NSRRC Users’ Meeting & Workshops,   
24097120091J.-F. Shiue, S.-W. Fang, C.-H. Wei, C.-Y. Hsiao, G.-R. Lee, T.-W. Pi, C.-P. Cheng*, Y.-W. Chan, C.-M. Mei, F.-Y. Liu, Y.-C. Lu, Interfacial properties of rubrene on Ag surface否 中華民國物理年會  
25097120091S.-W. Fang, J.-F. Shiue, C.-H. Wei, C.-Y. Hsiao, G.-R. Lee, T.-W. Pi, C.-P. Cheng*, Y.-W. Chan, C.-M. Mei, F.-Y. Liu, Y.-C. LuEnergy-level alignment of rubrene on Al surface否 中華民國物理年會  
26097120091S.-W. Fang, J.-F. Shiue, C.-H. Wei, C.-Y. Hsiao, G.-R. Lee, T.-W. Pi, C.-P. Cheng*, Y.-W. Chan, C.-M. Mei, F.-Y. Liu, Y.-C. LuEnergy-level alignment of rubrene on Al surface否 中華民國物理年會  
270981200910S.-W. Fang, J.-F. Shiue, C.-P. Cheng*, and T.-W. PiSynchrotron-radiation photoemission study of electronic structures at rubrene-Mg interfaces否 NSRRC Users’ Meeting & Workshops  
280981200910J.-F. Shiue, S.-W. Fang, C.-P. Cheng*, and T.-W. PiSynchrotron-radiation photoemission study of electronic structures at rubrene-Ag interface否 NSRRC Users’ Meeting & Workshops  
29097220096C.-P. Cheng*, W.-Y. Chen, C.-H. Wei, and T.-W. Interfacial properties of the K-doped C60: CuPc heterojunctions 否 34th IEEE Photovoltaic Specialists Conference PiPhiladelphia, PA 
30098120101S.-W. Fang, J.-F. Shiue, C.-P. Cheng *, and T.-W. PiElectronic properties of the Mg-rubrene interface否 中華民國物理年會  
31098120101J.-F. Shiue, S.-W. Fang, C.-P. Cheng *, and T.-W. Pi Electronic properties of a K-doped rubrene surface否 中華民國物理年會  
32098120101Y.-W. Chan, J.-F. Shiue, C.-P. Cheng *, and T.-W. PiInterfacial electronic properties of the rubrene/C60 heterojunction否 中華民國物理年會  
33098120101Chiu-Ping Cheng *, Wen-Yen Chen, Ching-Hsuan Wei, and Tun-Wen PiInterfacial electronic properties of K-doped CuPc: C60 heterojunctions否 中華民國物理年會  
34098120101Chiu-Ping Cheng,* Yi-Wei Chan, Chih-Feng Hsueh, and Tun-Wen Pi, Interfacial electronic properties of rubrene: C60 heterojunctions否 25th EU PVSEC/ 5th WCPEC-5 Valencia, Spain 
350991201010Chiu-Ping Cheng,* Yi-Wei Chan, Chih-Feng Hsueh, and Tun-Wen PiInterfacial electronic properties of rubrene: C60 heterojunctions否 NSRRC Users’ Meeting & Workshops  
36099120109Chiu-Ping Cheng,* Yi-Wei Chan, Chih-Feng Hsueh, and Tun-WenInterfacial electronic properties of rubrene: C60 heterojunctions否 25th EU PVSEC/ 5th WCPEC-5 PiValencia, Spain 
371001201110C.-W. Lee, C.-P. Cheng*, C.-H. Wei, C.-H. Kuo, H.-Y. Hsu, C.-C. Hsu, M.-Y. Lu, and T.-W. PiSynchrotron-radiation photoemission study of C60 on a Mg-doped rubrene surface是第二順位壁報發表 NSRRC Users’ Meeting and Workshops 台灣新竹 
381001201110C.-H. Kuo, C.-P. Cheng*, C.-H. Wei, C.-W. Lee, H.-Y. Hsu, C.-C. Hsu, M.-Y. Lu, and T.-W. PiSynchrotron-radiation photoemission study of C60 on a K-doped rubrene surface是第一順位口頭發表 NSRRC Users’ Meeting and Workshops 台灣新竹 
391001201110C.-P. Cheng*, C.-H. Kuo, C.-H. Wei, and T.-W. Pi,Interfacial Electronic properties of a K-doped rubrene surface是第一順位壁報發表 NSRRC Users’ Meeting and Workshops 台灣新竹 
40099220117C.-P. Cheng*, C.-F. Hsueh, S.-W. Fang, T.-W. PiInterfacial Electronic properties of a K-doped rubrene surface是第一順位壁報發表 Organic Microelectronics and Optoelectronics Worshop VII San Franciso, California, USA 
41100120121H.-Y. Hsu, C.-C. H., C.-H. Wei, T.-W. Pi, M.-H. Lu, and C.-P. ChengSynchrotron-radiation photoemission study of Li doping in rubrene是其他壁報發表 物理年會 台灣嘉義 
42100120121C.-W. Lee, C.-P. Cheng*, C.-H. Wei, C.-H. Kuo, H.-Y. Hsu, C.-C. Hsu, M.-Y. Lu, and T.-W. PiSynchrotron-radiation photoemission study of C60 on a Mg-doped rubrene surface是第一順位壁報發表 物理年會 台灣嘉義 
43100120121C.-H. Kuo, C.-P. Cheng*, C.-H. Wei, C.-W. Lee, H.-Y. Hsu, C.-C. Hsu, M.-Y. Lu, and T.-W. PiSynchrotron-radiation photoemission study of C60 on a K-doped rubrene surface是第二順位壁報發表 物理年會 台灣嘉義 
44100120121C.-P. Cheng*, C.-H. Kuo, C.-H. Wei, and T.-W. PiInterfacial Electronic properties of a K-doped rubrene surface是第一順位壁報發表 物理年會 台灣嘉義 
45100120121C.-P. Cheng*, C.-F. Hsueh, Y.-W. Chan, C.-W. Lee, and Tun-Wen PTemperature dependence of molecular conformation in rubrene thin film growth是第一順位口頭發表 物理年會 台灣嘉義 
46101120131Chiu-Ping Cheng*, T.-L. Li, C.-H. Kuo, and Tun-Wen PiGap stats formation mechanism of n-doped rubrene thin films是第一順位壁報發表 2013中華民國物理年會暨研究成果發表會  
47101220137Chiu-Ping Cheng*, Meng-Han Lu, Yu-Ya Chu, and Tun-Wen PiSynchrotron-radiation photoemission study of electronic structures of a Cs-doped rubrene surface是第一順位壁報發表 The 12th Asia Pacific Physics Conference  
48101220137Chiu-Ping Cheng*, Yu-Ya Chu, Meng-Han Lu, and Tun-Wen PiEffect of K doping on rubrene:C60 heterojunctions是第一順位口頭發表 The 12th Asia Pacific Physics Conference  
49102120139Chiu-Ping Cheng*, Meng-Han Lu, Ching-Hsuan Wei, Yu-Ya Chu, and Tun-Wen PiElectronic structures of a cesium-doped rubrene thin film是第一順位壁報發表 Annual Users Meeting and 20th Anniversary of Operation  
50102120139Chiu-Ping Cheng*, Yu-Ya Chu, Ching-Hsuan Wei, Meng-Han Lu, and Tun-Wen PiInterfacial electronic structures of C60 on potassium-doped rubrene thin films 是第一順位壁報發表 Annual Users Meeting and 20th Anniversary of Operation  
51102120139Chiu-Ping Cheng*, Huan-Yao Hsu, and Tun-Wen PiEffect of Li doping on rubrene:C60 heterojunctions是第一順位壁報發表 28th European Photovoltaic Solar Energy Conference and Exhibition  
52102120141Chiu-Ping Cheng*, Huan-Yao Hsu, Yu-Ya Chu and Tun-Wen Pi Interfacial Properties of C60 on a Li-Doped Rubrene Surface是第一順位壁報發表 2014中華民國物理年會暨研究成果發表會  
53102120141Chiu-Ping Cheng*, Huan-Yao Hsu, Yu-Ya Chu and Tun-Wen PiInterfacial Properties of C60 on a Li-Doped Rubrene Surface是第一順位壁報發表 2014中華民國物理年會暨研究成果發表會  
54102120141鄭秋平Interfacial properties of C60 on a Li doped rubrene surface是第一順位壁報發表 中華民國物理年會 暨研究成果發表會  
551031201412K. Y. Lin, B. Z. Syu, Y. H. Lin, Z. J. Peng, J. F. Lee, C. H. Fu, C.-P. Cheng (鄭秋平), T. W. Pi , J. KDirect determination of schottkey barrier heights and band bending between Fe3Si and GaAs (100) by in-situ XPS/UPS否其他口頭發表 45th Semiconductor Interface Specialist Conference (SISC) San Diego, California 
56103120149Chiu-Ping Cheng (鄭秋平) *, Yu-Ya Chu (屈郁雅), Meng-Han Lu (呂孟涵), Huan-Yao Hsu (徐煥堯), Cheng-Wei Lee (李正偉)Synchrotron-radiation Photoemission Study of Doping at the C60/Rubrene Heterointerface是第一順位壁報發表 國家同步輻射研究中心第20屆用戶年會暨研討會 新竹 
57103120149Chiu-Ping Cheng (鄭秋平)*, Yu-Ya Chu (屈郁雅), Meng-Han Lu (呂孟涵), Huan-Yao Hsu (徐煥堯), Cheng-Wei Lee (李正偉),Role of alkali- and alkali-earth-metal atoms adding at the organic semiconductor heterointerfaces是第一順位壁報發表 29th European Photovoltaic Solar Energy Conference and Exhibition Amsterdam, The Netherlands 
58103120151鄭秋平The effect of alkali-metal atoms doping at C60/rubrene heterointerfaces是其他壁報發表 2015中華民國物理年會  
59103120151鄭秋平Interfacial electronic structure of silver on GaAs(001)-2x4: A Schottkybarrier- height study是其他壁報發表 2015中華民國物理年會 清華大學 
60103120151鄭秋平Interfacial electronic structure of gold on GaAs(001)-2x4: A Schottky-barrier-height study是第一順位壁報發表 2015中華民國物理年會 清華大學 
611041201512鄭秋平Interfacial electronic structure of the noble metals on α2-GaAs(001)-2x4 surface: Atom-to-atom interaction and the Schottky barrier height是第二順位壁報發表 46th IEEE Semiconductor Interface Specialists Conference Arlington, VA, USA 
621041201512鄭秋平Interfacial electronic structure of aluminum on GaAs(001)-4x6:Re-examination of the interface with ALD tri-methylaluminum and water否第二順位口頭發表 46th IEEE Semiconductor Interface Specialists Conference  
631041201512鄭秋平Enhanced ALD-Y 2 O 3 Thin Film Quality and Interface Cleansing Achieved by UHV Annealing for III-V Passivation否其他口頭發表 46th IEEE Semiconductor Interface Specialists Conference Arlington, VA, USA 
64104120159鄭秋平Synchrotron-radiation Photoemission Study of Interfacial Electronic Structure of Ag on GaAs(001-)2x4 surface是其他壁報發表 21st NSRRC Users’ Meeting and Workshops 國家同步輻射研究中心 
65104120159鄭秋平Synchrotron-radiation Photoemission Study of Interfacial Electronic Structure of Au on GaAs(001-)2x4 surface是其他壁報發表 21st NSRRC Users’ Meeting and Workshops 國家同步輻射研究中心 
66104120161鄭秋平Interfacial Electronic Structure of Al on p-GaAs(001) : A Synchrotron-Radiation Photoemission Study of Schottky Barrier Height是其他壁報發表 2016年中華民國物理年會 中山大學 
67104120161鄭秋平Relevance Of Surface Electronic Structure For High Frequency Dispersion On N-Type Accumulation Capacitance否其他口頭發表 2016年中華民國物理年會 中山大學 
681051201612鄭秋平Epi Ge(001)-2×1 surface aimed for high-κ deposition: An electronicstructure study 否其他壁報發表 47th IEEE Semiconductor Interface Specialists Conference San Diego, USA 
691051201612鄭秋平Rebooting the interfacial knowledge of high k dielectrics on In0.53Ga0.47As(001)-4x2 否其他壁報發表 47th IEEE Semiconductor Interface Specialists Conference (SISC) San Diego, USA 
701051201612鄭秋平Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance 否其他壁報發表 47th IEEE Semiconductor Interface Specialists Conference (SISC) San Diego, USA 
711051201612鄭秋平Determination of Schottky barrier height prior to metal formation是第一順位書面發表 47th IEEE Semiconductor Interface Specialists Conference (SISC) San Diego, USA 
72105120169鄭秋平Interfacial electronic structure of aluminum on GaAs(001)-4x6: Reexamination of the interface with ALD tri-methylaluminum and water否第二順位壁報發表 2016年NSRRC第二十二屆 用戶年會暨研討會 國家同步輻射研究中心 
73105120169鄭秋平Interfacial electronic structure of gold on p-In0.53Ga0.47As(001)-4×2: A Schottky barrier height study是其他壁報發表 2016年NSRRC第二 十二屆用戶年會暨研討會 國家同步輻射研究中心 
74105120169鄭秋平Synchrotron-radiation Photoemission Study of Interfacial Electronic Structure of Ag on GaAs(001)-4x6是其他壁報發表 2016年NSRRC第二十二屆用戶年會暨研討會 國家同步輻射研究中心 
75105120169鄭秋平Relevance of GaAs(001) surface electronic structure for high frequency dispersion on n-type accumulation capacitance否其他壁報發表 2016年NSRRC第二十二屆用戶年會暨研討會 國家同步輻射研究中心 
76105120171T. W. Pi, et. al. C.-P. Cheng J. Kwo, and M. Hong Relevance of GaAs(001) Surface Electronic Structure for High Frequency Dispersion on N-Type Accumulation Capacitance否其他口頭發表  2017年 中華民國物理年會  
77105120171Yi-Ting Cheng et. al. Chiu-Ping Cheng Tun-Wen Pi, Raynien Kwo, and Minghwei HongSynchrotron Radiation Photoemission Study Of Single Phase Ge(001)- 21 Surface是其他壁報發表  2017年 中華民國物理年會  
78105220177Wan-Sin Chen et. al. Chiu-Ping Cheng, Tun-Wen Pi, Raynien Kwo, and Minghwei HongInterface Dipole of High k -Y2O3 on GaAs(001) Attained using Cycle-by-Cycle ALD and Synchrotron Radiation Photoelectron Spectroscopy是其他口頭發表 ALD 2017 17th International Conference on Atomic Layer Deposition Denver, Colorado, USA 
79105220177Yen-Hsun Lin et. al. Chiu-Ping Cheng, Tun-Wen Pi, Raynien Kwo, and Minghwei HongALD-Y2O3/GaAs(001) having extremely high thermal stability at 900 °C and very low interfacial trap densities - comparative studies with ALD Al2O3 and HfO2 gate dielectrics否其他口頭發表 ALD 2017 17th International Conference on Atomic Layer Deposition Denver, Colorado, USA 
80105220177Yi-Ting Cheng, et. al. Chiu-Ping Cheng, Raynien Kwo, and Minghwei HongElucidation of distinct electric characteristics of ALD oxides on highly ordered GaAs(001) and In0.53Ga0.47As(001) surfaces using synchrotron radiation photoelectron spectroscopy是其他書面發表 ALD 2017 17th International Conference on Atomic Layer Deposition Denver, Colorado, USA 
81106120179W. S. Chen et. al. C.-P. Cheng, T. W. Pi, J. Kwo, and M.Hong Interface Dipole of High k -Y2O3 on GaAs(001) Attained using Cycle-by-Cycle ALD and Synchrotron Radiation Photoelectron Spectroscopy是其他口頭發表 2017年 NSRRC第二十三屆用戶年會暨研討會  
82106120179Yi-Ting Cheng et. al. Tun-Wen Pi, Chiu-Ping Cheng, Raynien Kwo, and Minghwei HongElucidation of distinct electric characteristics of ALD oxides on highly ordered GaAs(001) and In0.53Ga0.47As(001) surfaces using synchrotron radiation photoelectron spectroscopy是第一順位口頭發表 2017年 NSRRC第二十三屆用戶年會暨研討會  
83107120188C.-P. Cheng, W. S. Chen, Y. T. Cheng, H. W. Wan, C. Y. Yang, T. W. Pi, J. Kwo, and M. HongThe growth mechanism of high- Y2O3 on GaAs(001) attained using in-situ cycle-by-cycle ALD and synchrotron radiation photoelectron spectroscopy是第一順位口頭發表 The AVS 18th International Conference on Atomic Layer Deposition (ALD 2018) Incheon, South Korea 
84107120189M. Hong et. al. and C.-P. Cheng MBE and multiple functions in-situ integrated via ultra-high vacuum否其他口頭發表 20th International Conference on Molecular Beam Epitaxy (ICMBE 2018)  
85107120189W. S. Chen et. al. C.-P. Cheng, T. W. Pi, J. Kwo, and M.HongALD-Y2O3 on GaAs(001)-4×6 – an in-situ atomic-scale study of growth mechanism using synchrotron radiation photoemission是其他壁報發表 24th Users’ Meeting and Workshops, National Synchrotron Radiation Research Center  
86107120189Y. T. Cheng et. al. C.-P. Cheng, T. W. Pi, J. Kwo, and M. HongA unique surface electronic structure of epi Ge(001)-2x1是其他壁報發表  the 24th Users’ Meeting and Workshops, National Synchrotron Radiation Research Center  
871081201911鄭秋平Comparative studies of (001), (110) and (111) epi-Ge surfaces oxidation by in-situ high-resolution synchrotron radiation photoemission是第一順位口頭發表 2019 IEEE Semiconductor Interface Specialists Conference (SISC)  
88108120199Y. T. Cheng, H. W. Wan, C. P. Cheng, J. Kwo, M. Hong, and T. W. PiAtomic and molecular oxygen bonding with epi Ge(001)-2x1 surface studied by in-situ high-resolution synchrotron radiation否其他口頭發表 2019 Max Planck-Postech-Hsinchu workshop on Complex phase materials  
89108120199Y. T. Cheng, H. W. Wan, C. P. Cheng, J. Kwo, M. Hong, and T. W. PiAtomic and molecular oxygen bonding with epi Ge(001)-2x1 surface studied by in-situ high-resolution synchrotron radiation否第三順位口頭發表 2019 Ge based electronic workshop  
901091202012H. W. Wan, Y. T. Cheng, C. K. Cheng, C. P. Cheng, J. Kwo, T. W. Pi, and M. HongSurface electronic structure of strained Si1−xGex layers grown on Ge(001) and Si(001)否其他書面發表 2020 IEEE Semiconductor Interface Specialists Conference (SISC)  
91108220202 Y. T. Cheng, H. W. Wan, C. P. Cheng, T. W. Pi, J. Kwo, and M. HongElectronic characteristics of (001), (110) and (111) epi-Ge surfaces and their oxidation using in-situ high-resolution synchrotron radiation photoemission否第三順位口頭發表 2020 台灣物理年會 (Annual Meeting of the Physical Society of Taiwan)  
92112220243Wan-Sin Chen, Yi-Ting Cheng, Yen-Hsun Glen Lin, Chiu-Ping Cheng, Jueinai Kwo, Minghwei HongStudy of initial growth and band diagram of e-beam evaporated Al2O3/ MBE Al/sapphire using in-situ x-ray photoelectron spectroscopy否其他口頭發表 APS March Meeting  

專書著作（共計1筆）
序號學年度學期年度月份作者書名出版社國際標準書號
1095120071C.-P. Cheng*Fullerene Research AdvancesNova Science Publishers, Inc. New York ISBN: 978-1-60021-842-8 

研究計畫（共計20筆）
備註欄說明：「教師研究計畫管理系統轉入之計畫」（係指依「國立嘉義大學產學合作計畫實施要點」第3點規定，與政府機關、法人、公民營事業機構、民間團體、學術研究機構等合作辦理有關事項，以本校名義與合作機構辦理簽約，其經費撥入本校之產學合作計畫。)
序號學年度學期年度月份參與性質委辦單位計畫名稱開始日期結束日期經費備註欄
1087119991國家科學及技術委員會有序排列的Ba/Si(001)2x1表面之電子結構研究1999.08.012000.07.310
2088120001國家科學及技術委員會高溫C60/Si(001)2x1表面之電子結構研究2000.08.012001.07.310
3089120011國家科學及技術委員會鍶薄膜吸附在矽(001)2x1表面之介面電子結構研究2001.08.012002.07.310
4090120021國家科學及技術委員會鹼土族金屬(鈣、鎂)吸附在矽(001)2x1 表面之介面電子結構研究(1/2)2002.08.012003.07.310
5091120031國家科學及技術委員會鹼土族金屬(鈣、鎂)吸附在矽(001)2x1 表面之介面電子結構研究(2/2)2003.08.012004.07.310
6096120078國家科學及技術委員會有機半導體異質接面之電子結構研究2007/08/012010/07/310
7100120119國家科學及技術委員會以紅螢烯為基礎之有機半導體元件介面電子結構研究2010/08/012013/07/31
80991201008國家科學及技術委員會以紅螢烯為基礎之有機半導體元件介面電子結構研究(1/3)2010/08/012013/07/311368000
90991201008國家科學及技術委員會以紅螢烯為基礎之有機半導體元件介面電子結構研究2010/08/012013/11/303874000
101001201108國家科學及技術委員會以紅螢烯為基礎之有機半導體元件介面電子結構研究(2/3)2011/08/012013/07/311253000
111011201208國家科學及技術委員會以紅螢烯為基礎之有機半導體元件介面電子結構研究(3/3)2012/08/012013/07/311253000
121011201208國家科學及技術委員會以紅螢烯為基礎之有機半導體元件介面電子結構研究(3/3)2012/08/012013/11/301253000
131021201308國家科學及技術委員會Picene的摻雜效應研究2013/08/012014/07/31673000
141021201308國家科學及技術委員會Picene的摻雜效應研究2013/08/012014/11/30673000
151031201408國家科學及技術委員會Picene薄膜摻雜鹼金族元素之電子結構研究2014/08/012015/07/31666000
161031201408總計畫主持人國家科學及技術委員會7-5nm半導體技術節點研究(2/5)(103-2622-E-002-031-)2014/08/012016/01/310
171032201507子計畫主持人其他民間企業團體-政府立案法人機構具CMOS製程相容性的自我對準反轉型通道n型InGaAs與p型GaSb (或Ge) MOSFET開發計畫2015/07/012018/06/300
181041201508科技部金屬和砷化鎵半導體表面介面電子結構之蕭基位能障壁研究2015/08/012016/07/311008000
191051201608科技部金屬和半導體介面之蕭基能障形成機制研究2016/08/012017/07/31925000
20105220172科技部MOST05-2112-M-415-0052016/08/012017/07/31

學術活動（共計1筆）
序號學年度學期年度月份活動分類活動名稱活動地點/期刊學報/比賽名稱
11052201702學術期刊論文審查期刊論文審稿Applied Surface Science 

推廣工作（共計5筆）
序號學年度學期年度月份推廣類別推廣名稱推廣地點
11051201611其他擔任國家同步輻射研究中心光束線實驗計畫審查人 
21051201611其他審查105年科技部專題研究計畫1件 
3104220167其他擔任國家同步輻射研究中心光束線實驗計畫審查人 
4105120168其他擔任國家同步輻射研究中心光束線實驗計畫審查人 
5105220172其他擔任國家同步輻射研究中心光束線實驗計畫審查人